智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案


2、For an n-channel depletion MOSFET,

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案

= 8 mA and

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案

= -6 V.If

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案

= 0.8 V, what is the value of the drain current,

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案

?()

A.8 mA

B.10.25 μA

C.10.28 mA

D.6 mA

正确答案:10.28 mA

3、The region of the JFET drain curve that lies between pinch-off and breakdown is called().。

A.the constant-voltage region

B.the ohmic region

C.the saturation region

正确答案:the saturation region

4、In the family of FETs, you can expect to find().。

A.an;n-channel type

B.a;p-channel type

C.unipolar structure

正确答案:an;n-channel type;a;p-channel type;unipolar structure

5、FETs usually().

A.are less sensitive to temperature change than BJTs

B.have a higher input impudence than BJTs

C.are smaller in construction than BJTs

正确答案:are less sensitive to temperature change than BJTs;have a higher input impudence than BJTs;

are smaller in construction than BJTs

第七章单元测试

1、This graphical solution represents().

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案

A.fixed bias for an;n-channel JFET

B.voltage-divider bias for an;n-channel JFET

C.self bias for an;n-channel JFET

正确答案:self bias for an;n-channel JFET

2、Generally, it is good design practice for linear amplifiers to have operating points that close to().

A.are close to saturation level

B.the cut-off region

C.the midpoint of the load line

正确答案:the midpoint of the load line

3、Which of the following biasing circuits can be used with E-MOSFETs?()

A.self bias

B.zero bias

C.drain-feedback bias

D.current-source bias

正确答案:drain-feedback bias

4、The primary difference between JFETs and depletion-type MOSFETs is().。

A.JFETs can have positive values of

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案

;and levels of drain current that exceed

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案

B.depletion-type MOSFETs can have positive values of

智慧树知到《模拟电子技术基础(西安邮电大学)》章节测试答案